Product Summary

The DS1230Y-150 is a 256k Nonvolatile SRAM. It is organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. The DS1230Y-150 can be used in place of existing 32k × 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. The DS1230Y-150 in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Parametrics

DS1230Y-150 absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃, -40℃ to +85℃ for Ind parts; (3)Storage Temperature: -40℃ to +70℃, -40℃ to +85℃ for Ind parts; (4)Soldering Temperature: 260℃ for 10 seconds.

Features

DS1230Y-150 features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k × 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range; (9)Optional industrial temperature range of -40℃ to +85℃, designated IND; (10)JEDEC standard 28-pin DIP package.

Diagrams

DS1230Y-150 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
DS1230Y-150
DS1230Y-150
Maxim Integrated Products
NVRAM
Data Sheet
Negotiable 
DS1230Y-150+
DS1230Y-150+
Maxim Integrated Products
NVRAM 256k Nonvolatile SRAM
Data Sheet
0-1: $8.54
1-25: $8.24
25-100: $8.09